tsm 8n50 500v n-channel mosfet 1/7 version: a12 to - 251 (ipak) to - 252 (dpak) product summary v ds (v) r ds(on) ( ? ) i d (a) 500 0.85 @ v gs =10v 7.2 features low on-resistance. high power and current handing capability. ordering information part no. package packing tsm8n50ch c5g to-251 75pcs / tube tsm8n50cp rog to-252 2.5kpcs / 13 reel note: g denotes for halogen free absolute maximum rating (tc = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 7.2 a tc = 100oc 4.3 a pulsed drain current (note 1) i dm 28.8 a single pulse avalanche energy (note 2) e as 181 mj total power dissipation @ t c = 25 o c p tot 89 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c note1: repetitive rating : pulse width limited by maximu m junction temperature. note2: l=7mh, i as =8a, v dd = 50v, v ds = 200v, starting t j = 2 5 thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 1.4 o c/w thermal resistance - junction to ambient r ? ja 50 pin definition : 1. gate 2. drain 3. source block diagram n-channel mosfet
tsm 8n50 500v n-channel mosfet 2/7 version: a12 electrical specifications (tc = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 500 -- -- v drain-source on-state resistance v gs = 10v, i d = 3.6a r ds(on) -- 0.7 0.85 ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 3.0 4.0 v zero gate voltage drain current v ds = 500v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na dynamic (note a) total gate charge v dd = 400v, i d = 7a, v gs = 10v q g -- 26.6 -- nc gate-source charge q gs -- 5.4 -- gate-drain charge q gd -- 6.82 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 1595 -- pf output capacitance c oss -- 127.4 -- reverse transfer capacitance c rss -- 14.5 -- switching (note a) turn-on delay time v gs = 10v, i d = 7a, v dd = 250v, r gen = 9.1 ? t d(on) -- 22 -- ns turn-on rise time t r -- 6.8 -- turn-off delay time t d(off) -- 42 -- turn-off fall time t f -- 4.8 -- source-drain diode ratings and characteristic source current i s -- -- 7 a diode forward voltage i s =7a, v gs = 0v v sd -- -- 1.5 v note a: pulse test : pulse width < 300 s, duty cycle < 2%.
tsm 8n50 500v n-channel mosfet 3/7 version: a12 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 8n50 500v n-channel mosfet 4/7 version: a12 diode reverse recovery time test circuit & waveform
tsm 8n50 500v n-channel mosfet 5/7 version: a12 to-251 mechanical drawing unit: millimeters
tsm 8n50 500v n-channel mosfet 6/7 version: a12 to-252 mechanical drawing unit: millimeters
tsm 8n50 500v n-channel mosfet 7/7 version: a12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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